21672439
9781433110627
Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change
by Yiran Chen, Hai Li
by Yiran Chen, Hai Li
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- Comments: A New Theory of Information and the Internet (Digital Formations) - Binding: Paperback ISBN13: 9781433110627 Size: 5.9 x 8.9 x .6 in. All items carefully packed & shipped promptly. We are
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Product details
- ISBN-13: 9781433110627
- ISBN: 1433110628
- Edition: 0
- Publication Date: 2011
- Publisher: CRC Press
AUTHOR
SUMMARY
Yiran Chen is the author of 'Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change', published 2011 under ISBN 9781433110627 and ISBN 1433110628.
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